Question

What kind of defect is introduced by doping in silicon crystals?
A. Dislocation defect’
B. Schottky defect
C. Frenkel defect
D. Electronic defect

Answer 1

Silicon is a chemical element represented by the symbol Si having atomic number 14. It is a member of group 14 in the periodic table. Electronic configuration is represented by $1{{s}^{2}}2{{s}^{2}}2{{p}^{6}}3{{s}^{2}}3{{p}^{4}}$.

Complete answer:
Doping is the process which generally occurs in semiconductors and is defined as the intentional introduction of impurities into intrinsic-semiconductors for the purpose of increasing its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. A semiconductor can be doped at such high levels that it acts more like a conductor as compared to a semiconductor and it is referred to as a degenerate semiconductor.
Doping is also used to control the colour in some pigments. Silicon can be doped with two most important materials silicon known as boron which has 3 valence electrons and phosphorus which has 5 valence electrons. Rather than these two there are some other materials like aluminum and indium having valency 3 and arsenic and antimony having valency 5 can also be used for doping.
Now from this discussion we can conclude that the doping is done either with electron rich or electron deficient so the defect occurring while doping of silicon is electronic defect.

Thus we can say that option D is the correct answer.

Note:
On the basis of doping we can also classify them into the p type and n type semiconductors when doping is done with the electron rich compound then it is known as p-type doping or when it is done with electron deficient one then it is known as n-type doping.