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Question: The electron density of intrinsic semiconductor at room temperature is \({10^{16}}\;{{\rm{m}}^{ - 3}...

The electron density of intrinsic semiconductor at room temperature is 1016  m3{10^{16}}\;{{\rm{m}}^{ - 3}}. When doped with a trivalent impurity, the electron density is decreased to 1014  m3{10^{14}}\;{{\rm{m}}^{ - 3}} at the same temperature. The majority carrier density is:
A. 1016  m3{10^{16}}\;{{\rm{m}}^{ - 3}}
B. 1018  m3{10^{18}}\;{{\rm{m}}^{ - 3}}
C. 1021  m3{10^{21}}\;{{\rm{m}}^{ - 3}}
D. 1020  m3{10^{20}}\;{{\rm{m}}^{ - 3}}
E. 1019  m3{10^{19}}\;{{\rm{m}}^{ - 3}}

Explanation

Solution

The electrons and holes are the charge carriers in semiconductors. The charge carrier density varies with the temperature of the semiconductor. The product of carrier density of majority carrier and minority carriers is equal to the square of electron density at room temperature.

Complete Step by Step Answer:
The electron density of the semiconductor is 1016  m3{10^{16}}\;{{\rm{m}}^{ - 3}}, reduced electron density is 1014  m3{10^{14}}\;{{\rm{m}}^{ - 3}}.

Write the equation to calculate the majority carrier density.
ne×nh=n2{n_e} \times {n_h} = {n^2}
Here, ne{n_e} is the minority carrier density, nh{n_h} is the majority carrier density, nn is the electron density.
Substitute nn as 1016  m3{10^{16}}\;{{\rm{m}}^{ - 3}} and ne{n_e} as 1014  m3{10^{14}}\;{{\rm{m}}^{ - 3}} in the above equation.
(1014  m3)nh=(1016  m3)2 nh=1018  m3\begin{array}{l} \left( {{{10}^{14}}\;{{\rm{m}}^{ - 3}}} \right){n_h} = {\left( {{{10}^{16}}\;{{\rm{m}}^{ - 3}}} \right)^2}\\\ {n_h} = {10^{18}}\;{{\rm{m}}^{ - 3}} \end{array}

Therefore, the majority carrier density is 1018  m3{10^{18}}\;{{\rm{m}}^{ - 3}}and the option (B) is correct.

Note: Make sure to remember the majority or minority carrier by the type of the semiconductor and make sure that you know about carrier concentration in semiconductor physics.