Question

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $\text{p-n}$ junctions are:

• A. drift in both forward and reverse bias
• B. diffusion in both forward and reverse bias
• C. diffusion in forward bias, drift in reverse bias
• D. drift in forward bias diffusion in reverse bias

Answer 1

Answer: (C)

diffusion in forward bias, drift in reverse bias

Answer 2

In forward biased p-n junction, the motion of carriers is caused by diffusion while in reversed based, it is became of drift.