Question

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p – n junction are

• A. Drift in forward bias, diffusion in reverse bias
• B. Diffusion in forward bias, drift in reverse bias
• C. Diffusion in both forward and reverse bias
• D. Drift in both forward and reverse bias

Answer 1

Answer: (B)

Diffusion in forward bias, drift in reverse bias

Answer 2

: in p-n junction, the diffusion of majority carries takes place when junction is forward biased and drifting of minority carries takes place across the junction, when it is reverse biased.