Question
Question: In PN- junction diodes the reverse saturation current is \[{10^{ - 5}}\] amp at \[{27^0}C\]. The for...
In PN- junction diodes the reverse saturation current is 10−5 amp at 270C. The forward current for a voltage of 0.2 volt is
(A) 2037.6×10−3 amp
(B) 203.76×10−3 amp
(C) 20.376×10−3 amp
(D) 2.0376×103 amp
Solution
Diode: It is a two-terminal electronic device that produces current primarily in one direction; it has low resistance in one direction and high resistance in other direction.
P-type semiconductor: Trivalent impurity (Boron, Gallium, Indium, and Aluminum) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
N-type semiconductor: Pentavalent impurity (Arsenic, Antimony, and Phosphorus) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
PN-junction: It is formed when a p-type semiconductor is fused to an n-type semiconductor.
Formula used:
i = is(eev/kT−1),
Here i= forward current in the PN-junction, is= saturation current in the PN-junction,
e= Charge of the electron,v= voltage source, k= Boltzmann’s constant, T= absolute temperature
Complete step by step answer:
It is given that the question,is= 10−5amp, T= 270C= (273+27) k=300K, v=0.2V
Now using the values and formula we get that i = is(eev/kT−1)
⇒i=10−5e1.4×10−23×3001.6×10−19×0.2−1
⇒i=10−5e420×10−230.32×10−19−1
⇒i=10−5[2038.6−1]
On some simplification we get,
⇒i=20.376×10−3A
Hence the correct option is (C).
Note:
Forward current: If the electrical current flows in the direction of lower resistance in a diode is called forward current.
A certain amount of positive voltage to be applied across the PN-junction to perform forward current.
A steady or equilibrium stage will be reached whereby electrons are diffusing out of the N-region and drifting (pulling by the huge positive charge left behind) back in at the same rate.
PN-junction is used in solar cells, a forward-biased diode is used in LED, and it is also used in rectifiers in many electric circuits.
In a PN-junction diode, the reverse saturation current is due to the diffusive flow of minority electrons from the p-side to the n-side and the holes move from the n-side to the p-side.