Question
Question: In an intrinsic semiconductor band gap is \(1.2eV\), then the ratio of number of charge carriers at ...
In an intrinsic semiconductor band gap is 1.2eV, then the ratio of number of charge carriers at 600K and 300K is of order:
A. 104
B. 107
C. 1010
D. 103
Solution
The main key to these solutions is observation of the semiconductor nature, as we can deduce the impact of the temperature by the nature of semiconductor material. After that we can deduce the equations by comparisons.
Complete step by step answer:
The energy gap Eg=1.2eV
Now the relation in charge carrier and temperature is
ni=noexp[−Eg/2KBT] where KBis Boltzmann constant and its value is 8.62×10−5eV/K
So at the given temperature of 300Kthe relation is
ni1=noexp[−Eg/2KB×300]
Similarly at the given temperature of 600Kthe relation is
ni2=noexp[−Eg/2KB×600]
Now the ratio of the given two is
ni1ni2=noexp[−Eg/2KB×300]noexp[−Eg/2KB×600]
=exp2KBEg[3001−6001] =exp[11.6] =1.09×105 ≈105
Note:- To deduce these relations we have to forget minor segments and values as they won’t affect anything at the large scale. But if anything isn’t at any decimal stage then they should be taken in account in finding the relations as they will have their consequences.