Electronic Devices Question on Semiconductor electronics: materials, devices and simple circuits

Question

In a silicon sample doped with N-type impurities, the Fermi level $(E_F)$ is situated 0.35 eV away from the intrinsic Fermi level $(E_i)$ . If the energy bandgap $(E_g)$ of silicon at 300 K is considered to be 1.10 eV, what is the separation between the Fermi level $(E_F)$ and the valence band edge $(E_v)$ ?

Answer 1

Solution

The Correct answer is option (D) : 0.90 eV