Question
Question: Consider the following statements A and B and identify the correct choice of the given answers A: T...
Consider the following statements A and B and identify the correct choice of the given answers
A: The width of the depletion layer in a P-N junction diode increases in forwards bias
B: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
A
A is true and B is false
B
Both A and B are false
C
A is false and B is true
D
Both A and B are true
Answer
A is false and B is true
Explanation
Solution
In forward biasing of PN junction diode width of depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap
