Question

$C$ and $Si$ both have same lattice structure; having $4$ bonding electrons in each. However, $C$ is insulator where as $Si$ is intrinsic semiconductor. This is because

• A. In case of C the valence band is not completely filled at absolute zero temperature
• B. In case of C the conduction band is partly filled even at absolute zero temperature
• C. The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
• D. The four bonding electron s in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit

Answer 1

Answer: (C)

The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Answer 2

The four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of $Si$
They lie in the third.