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Question: A p – n photodiode is fabricated from a semiconductor with a band gap of \(2.5\) eV. The signal wave...

A p – n photodiode is fabricated from a semiconductor with a band gap of 2.52.5 eV. The signal wavelength is

A

6000 Ao\overset{o}{A}

B

6000 nm

C

4000 nm

D

5000 Ao\overset{o}{A}

Answer

5000 Ao\overset{o}{A}

Explanation

Solution

: the detection occurs only when the energy of incident photon greater than or equal to the energy band gap

hcλ=2.5eV\frac{hc}{\lambda} = 2.5eV

λ=hc2.5eV=1240eV2.5eV=496nm5000A˚\therefore\lambda = \frac{hc}{2.5eV} = \frac{1240eV}{2.5eV} = 496nm \approx 5000Å